absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 18* i d @ v gs = 12v, t c = 100c continuous drain current 18* i dm pulsed drain current ? 72 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 177 mj i ar avalanche current ? 18 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? 1.7 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10 sec) weight 4.3 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhy57z30cm power mosfet thru-hole (to-257aa) 4/17/2001 www.irf.com 1 30v, n-channel * current is limited by internal wire diameter technology product summary part number radiation level r ds(on) i d irhy57z30cm 100k rads (si) 0.03 ? 18a* irhy53z30cm 300k rads (si) 0.03 ? 18a* irhy54z30cm 600k rads (si) 0.03 ? 18a* IRHY58Z30CM 1000k rads (si) 0.035 ? 18a* features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package light weight for footnotes refer to the last page to-257aa pd - 93824a
irhy57z30cm pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.028 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.03 ? v gs = 12v, i d = 18a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 16 ? ? s ( )v ds > 15v, i ds = 18a ? i dss zero gate voltage drain current ? ? 10 v ds = 24v ,v gs =0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 65 v gs =12v, i d = 18a q gs gate-to-source charge ? ? 20 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 10 t d (on) turn-on delay time ? ? 25 v dd = 15v, i d = 18a, t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 2054 ? v gs = 0v, v ds = 25v c oss output capacitance ? 936 ? pf f = 1.0mhz c rss reverse transfer capacitance ? 33 ? na ? ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 18* i sm pulse source current (body diode) ? ?? 72 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 18a, v gs = 0v ? t rr reverse recovery time ? ? 102 ns t j = 25c, i f = 18a, di/dt 100a/ s q rr reverse recovery charge ? ? 193 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by internal wire diameter measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package)
table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 10 a v ds =24v, v gs =0v r ds(on) static drain-to-source ? ? 0.025 ? 0.03 v gs = 12v, i d =18a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.03 ? 0.035 v gs = 12v, i d =18a on-state resistance (to-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers irhy57z30cm, irhy53z30cm and irhy54z30cm 2. part number IRHY58Z30CM fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.2 ? 1.2 v gs = 0v, i s = 18a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 vgs vds br i au ion let energy range v ds (v) mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 37.9 255 33.5 30 30 30 25 20 i 59.4 290 28.5 25 25 20 15 10 au 80.3 313 26.4 22.5 22.5 15 10 ? irhy57z30cm www.irf.com 3 na ? ? v v
irhy57z30cm pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5.0 6.0 7.0 8.0 9.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 22a 18a
www.irf.com 5 pre-irradiation irhy57z30cm fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 22a v = 6v ds v = 15v ds v = 24v ds 1 10 100 0.4 0.8 1.2 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 18a 110100 v ds, drain-to-source voltage (v) 1 10 100 1000 i d , drain current (a) 10ms tc = 25 c tj = 150 c single pulse operation in this area limited by r ds ( on )
irhy57z30cm pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectan g ular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package v gs
www.irf.com 7 pre-irradiation irhy57z30cm q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v . 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 8.0a 11.4a 18a v gs
irhy57z30cm pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 15v, starting t j = 25 c, l= 1.0 mh peak i l = 18a, v gs = 12v ? i sd 18a, di/dt 54a/ s, v dd 30v, t j 150 c footnotes: case outline and dimensions ? to-257aa ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/01
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